Monitory Carrier Lifetime Measurements in 6H-SiC Using the Photoconductive Decay Technique
p.525
p.525
Depth- and Time-Resolved Free Carrier Absorption in 4H SiC Epilayers: A Study of Carrier Recombination and Transport Parameters
p.529
p.529
Evaluation of Auger Recombination Rate in 4H-SiC
p.533
p.533
Ground States of the Ionized Isoelectronic Ti Acceptor in SiC
p.537
p.537
Radiotracer Identification of Ti, V and Cr Band Gap States in 4H- and 6H-SiC
p.541
p.541
Deep Levels in SiC:V by High Temperature Transport Measurements
p.545
p.545
Deep Level Defect Study of Ion Implanted (Ar, Mg, Cr) n-Type 6H-SiC by Deep Level Transient Spectroscopy
p.549
p.549
Oxygen-Related Defect Centers in 4H Silicon Carbide
p.553
p.553
Electrical Characterization of the Gallium Acceptor in 4H- and 6H-SiC
p.557
p.557
Radiotracer Identification of Ti, V and Cr Band Gap States in 4H- and 6H-SiC
Abstract:
You might also be interested in these eBooks
Info:
Periodical:
Materials Science Forum (Volumes 264-268)
Pages:
541-544
Citation:
Online since:
February 1998
Authors:
Keywords:
Price:
Permissions: