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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Fast SiC Epitaxial Growth in a Chimney CVD Reactor...

Fast SiC Epitaxial Growth in a Chimney CVD Reactor and HTCVD Crystal Growth Developments

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

131-136

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.131

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Cite this paper

Online since:

May 2000

Authors:

Alexsandre Ellison, Jie Zhang, W. Magnusson, Anne Henry, Qamar-ul Wahab, Peder Bergman, Carl G. Hemmingsson, Nguyen Tien Son, Erik Janzén

Keywords:

Chemical Vapor Deposition (CVD), Chimney, Defect Density, Growth Process, High Resistivity, HTCVD, Purity, Vertical Hot-Wall Reactor

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