Comparison of 5 kV 4H-SiC N-Channel and P-Channel IGBTs
p.1411
p.1411
Design and Simulations of 5000V MOS-Gated Bipolar Transistor (MGT) on 4H-SiC
p.1415
p.1415
TCAD Evaluation of Double Implanted 4H-SiC Power Bipolar Transistors
p.1419
p.1419
Operation of a 2500V 150A Si-IGBT / SiC Diode Module
p.1423
p.1423
High-Power P-Channel UMOS IGBT's in 6H-SiC for High Temperature Operation
p.1427
p.1427
High Temperature 4H-SiC FET for Gas Sensing Applications
p.1431
p.1431
High Temperature Gas Sensors Based on Catalytic Metal Field Effect Transistors
p.1435
p.1435
SiC-Based Gas Sensor Development
p.1439
p.1439
Fabrication of SiC Hydrogen Sensor by Pd-Implantation
p.1443
p.1443
High-Power P-Channel UMOS IGBT's in 6H-SiC for High Temperature Operation
Abstract:
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Info:
Periodical:
Materials Science Forum (Volumes 338-342)
Pages:
1427-1430
Citation:
Online since:
May 2000
Authors:
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