Intrinsic Mobility of Conduction Electrons in 4H-SiC
p.483
p.483
A Study of Band to Band Tunneling with Application to High-Field Transport in Hexagonal SiC Polytypes
p.487
p.487
Thermopower Measurements in 4H-SiC and Theoretical Calculations Considering the Phonon Drag Effect
p.491
p.491
Donor Densities and Donor Energy Levels in 3C-SiC Determined by a New Method Based on Hall-Effect Measurements
p.495
p.495
Intrinsic Defects in Silicon Carbide Polytypes
p.499
p.499
Radiation-Induced Pair Defects in 6H-SiC Studied by Optically Detected Magnetic Resonance
p.505
p.505
Intrinsic Defects in 6H-SiC Generated by Electron Irradiation at the Silicon Displacement Threshold
p.509
p.509
EPR Study of Proton Implantation Induced Intrinsic Defects in 6H- and 4H-SiC
p.513
p.513
EPR Study of Carbon Vacancy-Related Defects in Electron-Irradiated 6H-SiC
p.517
p.517
Intrinsic Defects in Silicon Carbide Polytypes
Abstract:
You might also be interested in these eBooks
Info:
Periodical:
Materials Science Forum (Volumes 353-356)
Pages:
499-504
Citation:
Online since:
January 2001
Authors:
Price:
Permissions: