EPR Study of Carbon Vacancy-Related Defects in Electron-Irradiated 6H-SiC
p.517
p.517
EPR of Deep Al and Deep B in Heavily Al-doped as Grown 4H-SiC
p.521
p.521
The Electronic Structure of the N Donor Center in 4H-SiC and 6H-SiC
p.525
p.525
Identification of Iron and Nickel in 6H-SiC by Electron Paramagnetic Resonance
p.529
p.529
Calculated Positron Annihilation Parameters for Defects in SiC
p.533
p.533
Annealing Process of Defects in Epitaxial SiC Induced by He and Electron Irradiation: Positron Annihilation Study
p.537
p.537
Recent Progress in SiC Epitaxial Growth and Device Processing Technology
p.543
p.543
Doping of Silicon Carbide by Ion Implantation
p.549
p.549
Neutron Irradiation of 4H SiC
p.555
p.555
Calculated Positron Annihilation Parameters for Defects in SiC
Abstract:
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Info:
Periodical:
Materials Science Forum (Volumes 353-356)
Pages:
533-536
Citation:
Online since:
January 2001
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