Positron Beam Doppler and Lifetime Studies on Disordered and Amorphous Si
p.129
p.129
Magic Number Vacancy Clusters in Graphite and Silicon
p.132
p.132
Irradiation Experiment Revisited – Stability and Positron Lifetime of Large Vacancy Clusters in Silicon
p.135
p.135
Electric Field Dependent Positronium Formation in α-SiO2
p.138
p.138
Characterization of Radiation- Induced Defects in ZnO Probed by Positron Annihilation Spectroscopy
p.141
p.141
Defect Studies in BaTiO3 Ceramics Using Positron Annihilation Spectroscopy
p.144
p.144
Positron Study of Cu-Se, In-Se and CuInSe2 Thin Films
p.147
p.147
A Study of Vacancy-Like Defects in the Chalcopyrite Semiconductor AgInSe2
p.150
p.150
A Positron Annihilation Study of Compensation Defects Responsible for Conduction- Type Conversions in LEC-Grown InP
p.153
p.153
Characterization of Radiation- Induced Defects in ZnO Probed by Positron Annihilation Spectroscopy
Abstract:
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Periodical:
Materials Science Forum (Volumes 363-365)
Pages:
141-143
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Online since:
April 2001
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