In Situ Etching of 4H-SiC in H2 with Addition of HCl for Epitaxial CVD Growth
p.239
p.239
Surface Morphology of SiC Epitaxial Layers Grown by Vertical Hot-Wall Type CVD
p.243
p.243
Delta-Doped Layers of SiC Grown by 'Pulse Doping' Technique
p.247
p.247
Homoepitaxial 'Web Growth' of SiC to Terminate C-Axis Screw Dislocations and Enlarge Step-Free Surfaces
p.251
p.251
Formation of Epitaxial Mesa Structures on 4H-SiC (0001) and (11-20) Substrates
p.255
p.255
Characteristics of Boron in 4H-SiC Layers Produced by High-Temperature Techniques
p.259
p.259
Epitaxial Growth of 4H-SiC with Hexamethyldisilane HMDS
p.263
p.263
Homoepitaxial Growth of 4H-SiC on Porous Substrate Using Bis-Trimethylsilylmethane Precursor
p.267
p.267
TEM (XHREM) and EDX Studies of 6H-SiC Porous Layer as a Substrate for Subsequent Homoepitaxial Growth
p.271
p.271
Formation of Epitaxial Mesa Structures on 4H-SiC (0001) and (11-20) Substrates
Abstract:
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Info:
Periodical:
Materials Science Forum (Volumes 389-393)
Pages:
255-258
Citation:
Online since:
April 2002
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