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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Scanning Capacitance Microscopy of SiC Multiple PN...

Scanning Capacitance Microscopy of SiC Multiple PN Junction Structure Grown by Cold-Wall Chemical Vapor Deposition

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

659-662

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.659

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Online since:

April 2002

Authors:

Jun Suda, Shun-ichi Nakamura, Mineo Miura, Tsunenobu Kimoto, Hiroyuki Matsunami

Keywords:

Chemical Vapor Deposition (CVD), Doping, Scanning Electron Microscope (SEM), SCM, Silicon Carbide (SiC), SIMS

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