Paper Titles

A Highly Effective Edge Termination Design for SiC Planar High Power Devices
p.1253

Optimization of JTE Edge Terminations for 10 kV Power Devices in 4H-SiC
p.1257

The SiC-SiO₂ Interface: A Unique Advantage of SiC as a Wide Energy-Gap Material
p.1263

A Long-Term Reliability of Thermal Oxides Grown on n-Type 4H-SiC Wafer
p.1269

Recent Advances in (0001) 4H-SiC MOS Device Technology
p.1275

Characterizations of SiC/SiO₂ Interface Quality Toward High Power MOSFETs Realization
p.1281

Hall Effect Measurements in SiC Buried-Channel MOS Devices
p.1287

First-Principles Study of O Adsorption at SiC Surface
p.1293

Interface States in Abrupt SiO₂/4H- and 6HSiC(0001) from First-Principles: Effects of Si Dangling Bonds, C Dangling Bonds and C Clusters
p.1297

HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Recent Advances in (0001) 4H-SiC MOS Device...

Recent Advances in (0001) 4H-SiC MOS Device Technology

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1275-1280

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1275

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Online since:

June 2004

Authors:

Mrinal K. Das

Keywords:

Channel Mobility, Interface States (or Traps), Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), MOS, Nitridation, Oxide Reliability

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