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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Development of 10 kV 4H-SiC Power DMOSFETs

Development of 10 kV 4H-SiC Power DMOSFETs

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1385-1388

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1385

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Online since:

June 2004

Authors:

Sei Hyung Ryu, Anant K. Agarwal, Sumi Krishnaswami, Jim Richmond, John W. Palmour

Keywords:

High Voltage (HV), Junction Termination Extension (JTE), Multiple Zone JTE, Power MOSFET

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