SiC Studied Via LEEN and Cathodoluminescence Spectroscopy
p.543
p.543
Properties of the Bound Excitons Associated to the 3838Å Line in 4H-SiC and the 4182Å Line in 6H-SiC
p.549
p.549
Electrical Transport Properties of n-Type 4H and 6H Silicon Carbide
p.555
p.555
Further Investigation of Silicon Vacancy-Related Luminescence in 4H and 6H SiC
p.561
p.561
Evaluation of Free Carrier Lifetime and Deep Levels of the Thick 4H-SiC Epilayers
p.565
p.565
Photoluminescence Mapping of a SiC Wafer in Device Processing
p.569
p.569
Spontaneous Polarization of 4H SiC Determined from Optical Emissions of 4H/3C/4H-SiC Quantum Wells
p.573
p.573
Optical Investigation of Stacking Faults and Micro-Crystalline Inclusions In-Low-Doped 4H-SiC Layers
p.577
p.577
Characterization of Double Stacking Faults Induced by Thermal Processing of Heavily N-Doped 4H-SiC Substrates
p.581
p.581
Evaluation of Free Carrier Lifetime and Deep Levels of the Thick 4H-SiC Epilayers
Abstract:
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Info:
Periodical:
Materials Science Forum (Volumes 457-460)
Pages:
565-568
Citation:
Online since:
June 2004
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