Development of Epitaxial SiC Processes Suitable for Bipolar Power Devices

Joseph J. Sumakeris; Mrinal K. Das; Seo Young Ha; Edward Hurt; Kenneth G. Irvine; Michael J. Paisley; Michael  J. O'Loughlin; John W. Palmour; Marek Skowronski; H. McD. Hobgood; Calvin H. Carter Jr.

doi:10.4028/www.scientific.net/MSF.483-485.155

Paper Titles

Large Area SiC Epitaxial Layer Growth in a Warm-Wall Planetary VPE Reactor
p.137

Epitaxial Growth of n-Type 4H-SiC on 3" Wafers for Power Devices
p.141

Epitaxial Overgrowth of 4H-SiC for Devices with p-Buried Floating Junction Structure
p.147

Reduction of Stacking Faults in Fast Epitaxial Growth of 4H-SiC and its Impacts on High-Voltage Schottky Diodes
p.151

Development of Epitaxial SiC Processes Suitable for Bipolar Power Devices
p.155

Characteristics of Trench-Refilled 4H-SiC P-N Junction Diodes Fabricated by Selective Epitaxial Growth
p.159

Molecular Beam Epitaxy of Semiconductor Nanostructures Based on SiC
p.163

Computer Simulation of the Early Stages of Nano Scale SiC Growth on Si
p.169

Growth of 3C-(Si_1-xC_1-y)Ge_x+y Layers on 4H-SiC by Molecular Beam Epitaxy
p.173

HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Development of Epitaxial SiC Processes Suitable...

Development of Epitaxial SiC Processes Suitable for Bipolar Power Devices

Abstract:

We present a survey of the most important factors relating to an epitaxial SiC growth process that is suitable for bipolar power devices. During the last several years, we have advanced our hot-wall SiC epitaxial growth technology to the point that we can support the transition of bipolar power devices from demonstrations to applications. Two major concerns in developing a suitable epitaxial technology are epilayer uniformity and extended defect density. Our state-of-theart capability permits the realization of 1-cm2 area devices with exceptional yields. Another major concern is the stability of bipolar devices during forward conduction. We have developed proprietary substrate and epilayer preparation technologies that have essentially eliminated Vf drift as a significant barrier to the exploitation of SiC based bipolar devices.

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Periodical:

Materials Science Forum (Volumes 483-485)

Pages:

155-158

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.155

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Online since:

May 2005

Authors:

Joseph J. Sumakeris, Mrinal K. Das, Seo Young Ha, Edward Hurt, Kenneth G. Irvine, Michael J. Paisley, Michael J. O'Loughlin, John W. Palmour, Marek Skowronski, H. McD. Hobgood, Calvin H. Carter Jr.

Keywords:

Defect Density, Epilayer Uniformity, SiC Epitaxy, V_f Drift

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