Reduction of Stacking Faults in Fast Epitaxial Growth of 4H-SiC and its Impacts on High-Voltage Schottky Diodes
p.151
p.151
Development of Epitaxial SiC Processes Suitable for Bipolar Power Devices
p.155
p.155
Characteristics of Trench-Refilled 4H-SiC P-N Junction Diodes Fabricated by Selective Epitaxial Growth
p.159
p.159
Molecular Beam Epitaxy of Semiconductor Nanostructures Based on SiC
p.163
p.163
Computer Simulation of the Early Stages of Nano Scale SiC Growth on Si
p.169
p.169
Growth of 3C-(Si1-xC1-y)Gex+y Layers on 4H-SiC by Molecular Beam Epitaxy
p.173
p.173
Lateral Epitaxial Overgrowth of 3C-SiC on Si Substrates by CVD Method
p.177
p.177
Suppression Mechanism of Double Positioning Growth in 3C-SiC(111) Crystal by Using an Off-Axis Si(110) Substrate
p.181
p.181
Influence of Substrate Roughness on the Formation of Defects in 3C-SiC Grown on Si(110) Substrate by Hetero-Epitaxial CVD Method
p.185
p.185
Computer Simulation of the Early Stages of Nano Scale SiC Growth on Si
Abstract:
Solid source molecular beam epitaxy was applied to create silicon carbide nanoclusters on silicon. The island size distribution can be controlled by an appropriate substrate temperature, carbon fluxes and process times. Rate equation computer simulation was applied to simulate the experimental obtained nano scale nuclei properties.
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Periodical:
Materials Science Forum (Volumes 483-485)
Pages:
169-172
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Online since:
May 2005
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