Growth of 3C-(Si1-xC1-y)Gex+y Layers on 4H-SiC by Molecular Beam Epitaxy

Petia Weih; Henry Romanus; Thomas Stauden; Lothar Spieß; Oliver Ambacher; J. Pezoldt

doi:10.4028/www.scientific.net/MSF.483-485.173

Paper Titles

Development of Epitaxial SiC Processes Suitable for Bipolar Power Devices
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Characteristics of Trench-Refilled 4H-SiC P-N Junction Diodes Fabricated by Selective Epitaxial Growth
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Molecular Beam Epitaxy of Semiconductor Nanostructures Based on SiC
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Computer Simulation of the Early Stages of Nano Scale SiC Growth on Si
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Growth of 3C-(Si_1-xC_1-y)Ge_x+y Layers on 4H-SiC by Molecular Beam Epitaxy
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Lateral Epitaxial Overgrowth of 3C-SiC on Si Substrates by CVD Method
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Suppression Mechanism of Double Positioning Growth in 3C-SiC(111) Crystal by Using an Off-Axis Si(110) Substrate
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Influence of Substrate Roughness on the Formation of Defects in 3C-SiC Grown on Si(110) Substrate by Hetero-Epitaxial CVD Method
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Planar Defects, Voids and their Relationship in 3C-SiC Layers
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HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Growth of 3C-(Si1-xC1-y)Gex+y Layers on 4H-SiC by...

Growth of 3C-(Si_1-xC_1-y)Ge_x+y Layers on 4H-SiC by Molecular Beam Epitaxy

Abstract:

In the present work cubic 3C-(Si1-xC1-y)Gex+y solid solutions were grown at different^temperatures by molecular beam epitaxy on on-axis 4H-SiC (0001) substrates. Two different growth methods are compared in order to explore the optimal growth conditions for the incorporation of Ge into the SiC lattice during the low temperature epitaxy. For this reason simultaneous growth and migration enhanced epitaxy were used. The chemical composition of the grown layers were analyzed by energy dispersive x-ray methods during transmission electron microscopy investigations. It was found that the migration enhanced epitaxy is a more suitable technique for the formation of high quality (Si1-xC1-y)Gex+y solid solutions. Additionally, polytypes transition from 4H-SiC to 3C-SiC occurs during the growth independent of the applied growth technique.