Low Temperature Chemical Vapor Deposition of 3C-SiC on Si Substrates

Christian Förster; Volker Cimalla; Oliver Ambacher; J. Pezoldt

doi:10.4028/www.scientific.net/MSF.483-485.201

Paper Titles

Influence of Substrate Roughness on the Formation of Defects in 3C-SiC Grown on Si(110) Substrate by Hetero-Epitaxial CVD Method
p.185

Planar Defects, Voids and their Relationship in 3C-SiC Layers
p.189

Suppression of the Twin Formation in CVD Growth of (111) 3C-SiC on (110) Si Substrate
p.193

Regrowth of 3C-SiC on CMP Treated 3C-SiC/Si Epitaxial Layers
p.197

Low Temperature Chemical Vapor Deposition of 3C-SiC on Si Substrates
p.201

Challenge to 200 mm 3C-SiC Wafers Using SOI
p.205

Key Radicals for Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates
p.209

Nucleation Control in FLASIC Assisted Short Time Liquid Phase Epitaxy by Melt Modification
p.213

A Thermal Model for Flash Lamp Annealing of 3C-SiC/Si Multi-Layer Systems (i-FLASiC)
p.217

HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Low Temperature Chemical Vapor Deposition of...

Low Temperature Chemical Vapor Deposition of 3C-SiC on Si Substrates

Abstract:

In the present work an UHVCVD method was developed which allows the epitaxial growth of 3C-SiC on Si substrates at temperatures below 1000°C. The developed method enable the growth of low stress or nearly stress free single crystalline 3C-SiC layers on Si. The influence of hydrogen on the growth process are be discussed. The structural properties of the 3C-SiC(100) layers were studied with reflection high-energy diffraction, atomic force microscopy, X-ray diffraction and the layer thickness were measured by reflectometry as well as visible ellipsometry. The tensile strain reduction at optimized growth temperature, Si/C ratio in the gas phase and deposition rate are demonstrated by the observation of freestanding SiC cantilevers.

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Periodical:

Materials Science Forum (Volumes 483-485)

Pages:

201-204

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.201

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Online since:

May 2005

Authors:

Christian Förster, Volker Cimalla, Oliver Ambacher, J. Pezoldt

Keywords:

3C-SiC, Chemical Vapor Deposition (CVD), Low-Temperature

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