Infrared Gratings Based on SiC/Si-Heterostructures

Carsten Rockstuhl; H.P. Herzig; Christian Förster; André Leycuras; Oliver Ambacher; J. Pezoldt

doi:10.4028/www.scientific.net/MSF.483-485.433

Paper Titles

Comparison of Electrically and Optically Determined Minority Carrier Lifetimes in 6H-SiC
p.417

Electrical Characterisation of Heavily Al Doped 4H-SiC Layer Grown by Vapour-Liquid-Solid Epitaxy in Al-Si Melt
p.421

Evaluation of On-State Resistance and Boron-Related Levels in n-Type 4H-SiC
p.425

Effects of Epitaxial Layer Growth Parameters on the Defect Density and on the Electrical Characteristics of Schottky Diodes
p.429

Infrared Gratings Based on SiC/Si-Heterostructures
p.433

Characterisation of 4H-SiC PiN Diodes by Micro-Raman Scattering and Photoemission
p.437

Hall Effect in the Channel of 3C-SiC MOSFETs
p.441

Photoluminescence Study of In-Situ Rare Earth Doped PVT-Grown SiC Single Crystals
p.445

Excitation Power Dependence of Al-Related Features in the LTPL Spectra of 4H-SiC
p.449

HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Infrared Gratings Based on SiC/Si-Heterostructures

Infrared Gratings Based on SiC/Si-Heterostructures

Abstract:

The fabrication process and the spectral properties of gratings for the infrared wavelength region on the basis of 3C-SiC layers grown by CVD on (100) oriented Si substrates are demonstrated. The formed 3C-SiC gratings on Si support two phonon polaritons as a function of the geometrical properties excited between 10.3 and 11.4 µm. They appear as a dip in the transmission spectrum. A third minimum in the transmission spectrum is caused by the substrate – grating interaction. The obtained resonances were polarization sensitive, i.e. they appeared only under TMpolarized illumination.

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Periodical:

Materials Science Forum (Volumes 483-485)

Pages:

433-436

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.433

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Online since:

May 2005

Authors:

Carsten Rockstuhl, H.P. Herzig, Christian Förster, André Leycuras, Oliver Ambacher, J. Pezoldt

Keywords:

3C-SiC, Infrared, Optical Device, Optical Property, Silicon

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