Surface and Interface Studies of Si-Rich 4H-SiC and SiO2
p.581
p.581
Characterization of Oxide Films on SiC Epitaxial (000-1) Faces by Angle-Resolved Photoemission Spectroscopy Measurements Using Synchrotron Radiation
p.585
p.585
Characterization of SiC Passivation Using MOS Capacitor Ultraviolet-Induced Hysteresis
p.589
p.589
Observation of Deep Level Centers in 4H and 6H Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors
p.593
p.593
Technological Aspects of Ion Implantation in SiC Device Processes
p.599
p.599
Fabrication of Compact Ion Implanter for Silicon Carbide Devices
p.605
p.605
Development of the Novel Electron Bombardment Anneal System (EBAS) for SiC Post Ion Implantation Anneal
p.609
p.609
Aluminium Implantation Induced Linear Surface Faults in 4H-SiC
p.613
p.613
Electrical Behavior of Implanted Aluminum and Boron near Tail Region in 4H-SiC after High-Temperature Annealing
p.617
p.617
Technological Aspects of Ion Implantation in SiC Device Processes
Abstract:
Technological aspects of ion implantation in SiC device processes are described. Annealing techniques to suppress surface roughening of implanted SiC (0001) are demonstrated. Trials to achieve a low sheet resistance are described for n-type and p-type doping. Implantation into the (11-20) face is also presented. Electrical behaviors of implants near implanted tail regions are discussed based on experiments.
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Info:
Periodical:
Materials Science Forum (Volumes 483-485)
Pages:
599-604
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Online since:
May 2005
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