First Demonstration of 2.1 kW Output Power at 425 MHz Using 4H-SiC RF Power BJTs

Anant K. Agarwal; Fatima Husna; Jeremy Haley; Howard Bartlow; Bill McCalpin; Sumi Krishnaswami; Craig Capell; Sei Hyung Ryu; John W. Palmour

doi:10.4028/www.scientific.net/MSF.527-529.1413

Paper Titles

A 1cm × 1cm, 5kV, 100A, 4H-SiC Thyristor Chip for High Current Modules
p.1397

Simulation of High-Voltage Injection-Enhanced 4H-SiC N-Channel IGBTs with Forward Drop Approaching that of a PiN Junction Rectifier
p.1401

Simulations of 10 kV Trench Gate IGBTs on 4H-SiC
p.1405

Influence of Basal Plane Dislocation Induced Stacking Faults on the Current Gain in SiC BJTs
p.1409

First Demonstration of 2.1 kW Output Power at 425 MHz Using 4H-SiC RF Power BJTs
p.1413

1836 V, 4.7 mΩ•cm² High Power 4H-SiC Bipolar Junction Transistor
p.1417

4H-SiC Bipolar Transistors with UHF and L-Band Operation
p.1421

Current Gain Dependence on Emitter Width in 4H-SiC BJTs
p.1425

Optimization of the Specific On-Resistance of 4H-SiC BJTs
p.1429

HomeMaterials Science ForumMaterials Science Forum Vols. 527-529First Demonstration of 2.1 kW Output Power at 425...

First Demonstration of 2.1 kW Output Power at 425 MHz Using 4H-SiC RF Power BJTs

Abstract:

For the first time, 4H-SiC RF bipolar junction transistors have been used to produce an output power in excess of 2.1 kW at 425 MHz. For an input pulse width of 2 μs and 1% duty cycle, the power gain at peak output power is 6.3 dB with the collector efficiency and power added efficiency [PAE] being 45% and 35%, respectively, at a collector supply voltage of 75 V in a class C configuration. The package consists of 24 cells (2 chips) having an emitter periphery of approximately 1 inch per cell. Each cell produced a DC current gain (β) of 15 and a common emitter breakdown voltage (BVCEO) greater than 250 V. A peak output power of 87 W per cell was obtained at 425 MHz, as compared to the earlier report of 50 W per cell [1, 2] by using a shorter pulse width and duty cycle.