Composite Ohmic Contacts to SiC

A.V. Adedeji; Ayayi Claude Ahyi; John R. Williams; M.J. Bozack; S.E. Mohney; B. Liu; James D. Scofield

doi:10.4028/www.scientific.net/MSF.527-529.879

Paper Titles

Ni Graphite Intercalated Compounds in Ohmic Contact Formation on SiC
p.863

Ohmic Contact for C-face n-Type 4H-SiC with Reduced Graphite Precipitation
p.867

Structural Properties of Titanium-Nickel Films on Silicon Carbide Following High Temperature Annealing
p.871

Die Bonding Issues on Silicon Carbide Diodes
p.875

Composite Ohmic Contacts to SiC
p.879

Tantalum-Ruthenium Diffusion Barriers for Contacts to SiC
p.883

Investigation of TiW Contacts to 4H-SiC Bipolar Junction Devices
p.887

Characterization of Ti/Al Ohmic Contacts to p-Type 4H-SiC Using Cathodoluminescence and Auger Electron Spectroscopies
p.891

Ohmic Contacts to P-Type Epitexial and Imlanted 4H-SiC
p.895

HomeMaterials Science ForumMaterials Science Forum Vols. 527-529Composite Ohmic Contacts to SiC

Composite Ohmic Contacts to SiC

Abstract:

Composite ohmic contacts designed for SiC devices operating in air at 350°C have been studied. Ohmic contacts to n- and p-4H-SiC were protected against inter-diffusion and oxidation by Ta-Si-N layers obtained by sputter deposition from a TaSi2 target in a mixture of Ar and N2. Platinum was sputter-deposited at 250°C to promote adhesion between the Ta-Si- N barrier layer and a thick Au cap layer. Platinum also acts as a barrier to the diffusion of Au. The electrical and mechanical characteristics of the composite contacts were stable after hundreds of hours of annealing in air at 350°C. We report the effects of thermal aging on the specific contact resistance and the semiconductor sheet resistance, and the results of wire bond pull and shear tests following aging for Ta-Si-N / Pt / Au stacks deposited on both SiO2 dielectric layers and the ohmic contact layers.

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Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

879-882

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.879

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Online since:

October 2006

Authors:

A.V. Adedeji, Ayayi Claude Ahyi, John R. Williams, M.J. Bozack, S.E. Mohney, B. Liu, James D. Scofield

Keywords:

Diffusion / Oxidation Barrier, Ohmic Contact, Wire Bonding

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