Paper Titles

Electrical Characterisation of 4H-SiC Epitaxial Samples Treated by Hydrogen or Helium
p.347

Electric-Field Screening Effects in the Micro-Photoluminescence Spectra of As-Grown Stacking Faults in 4H-SiC
p.351

EPR, ESE and Pulsed ENDOR Study of Nitrogen Related Centers in 4H-SiC Wafers Grown by Different Technologies
p.355

Excess Carrier Lifetimes in a Bulk p-Type SiC Wafer Measured by the Microwave Photoconductivity Decay Method
p.359

FTIR Ellipsometry Analysis of the Internal Stress in SiC/Si MEMS
p.363

Impurity Conduction in Silicon Carbide
p.367

Influence of Cooling Rate after High Temperature Annealing on Deep Levels in High-Purity Semi-Insulating 4H-SiC
p.371

Investigation of Charge Carrier Lifetime Temperature-Dependence in 4H-SiC Diodes
p.375

Mechanisms of Decrease in Hole Concentration in Al-Doped 4H-SiC by Irradiation of 200 keV Electrons
p.379

HomeMaterials Science ForumMaterials Science Forum Vols. 556-557FTIR Ellipsometry Analysis of the Internal Stress...

FTIR Ellipsometry Analysis of the Internal Stress in SiC/Si MEMS

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Abstract:

The resonant frequencies and quality factors of MEMS and NEMS depend critically on the layer quality and the residual stress in the SiC/Si heterostructure. It is demonstrated, that FTIRellipsometry is a suitable technique for monitoring the inhomogeneous residual stress inside SiC/Si heterostructures containing thin layers and their variation with during processing.

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Silicon Carbide and Related Materials 2006

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Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

363-366

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.363

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Online since:

September 2007

Authors:

J. Pezoldt, Christian Förster, Volker Cimalla, Florentina Will, Ralf Stephan, Klemens Brueckner, Matthias A. Hein, Oliver Ambacher

Keywords:

Ellipsometry, FT-IR, Heteroepitaxy, Stress

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