Solution Growth of Off-Axis 4H-SiC for Power Device Application

Ryo Hattori; Kazuhiko Kusunoki; Nobuyuki Yashiro; Kazuhito Kamei

doi:10.4028/www.scientific.net/MSF.600-603.179

Paper Titles

Local-Loading Effect in Low-Temperature Selective Epitaxial Growth of 4H-SiC by Halo-Carbon Method
p.163

Micropipe Dissociation through Thick n⁺ Buffer Layer Growth
p.167

Growth Mechanism and 2D Aluminum Dopant Distribution of Embedded Trench 4H-SiC Region
p.171

In Situ Nitrogen and Aluminum Doping in Migration Enhanced Embedded Epitaxial Growth of 4H-SiC
p.175

Solution Growth of Off-Axis 4H-SiC for Power Device Application
p.179

Epitaxial TaC Films for the Selective Area Growth of SiC
p.183

Solution Growth of 3C-SiC on 6H-SiC Using Si Solvent under N₂-He Atmosphere
p.187

Solution Growth of 3C-SiC Single Crystals by Cold Crucible Technique
p.191

Growth Mechanism of 3C-SiC Heteroepitaxial Layers on α-SiC by VLS
p.195

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Solution Growth of Off-Axis 4H-SiC for Power Device Application

Abstract:

Solution growth on off-axis 4H-SiC sublimation substrate as a buffer layer for the subsequent CVD epitaxial growth was investigated. Dislocation conversion and propagation from the substrate to the CVD epitaxial layer through the solution grown buffer layer was inspected by molten KOH etch pit observation. Effective dislocation conversion from BPD to TED as an effect of the buffer layer insertion with no drastic change in the total EPD was confirmed.