Origin of Giant Step Bunching on 4H-SiC (0001) Surfaces

Yuuki Ishida; Tetsuo Takahashi; Hajime Okumura; Kazuo Arai; Sadafumi Yoshida

doi:10.4028/www.scientific.net/MSF.600-603.473

Paper Titles

Diffusion and Electroluminescence Studies of Low Temperature Diffusion of Boron in 3C-SiC
p.457

Raman Investigation of the Effect of Metal Impurities at Gettering Sites on Phonon and Electron Related Properties of 4H-SiC n-n⁺ Junctions
p.465

Nitrogen Passivation of (0001) 4H-SiC Dangling Bonds
p.469

Origin of Giant Step Bunching on 4H-SiC (0001) Surfaces
p.473

Enhanced Annealing of the Main Lifetime Limiting Defect in Thick 4H-SiC Layers
p.477

Impact of 4H-SiC Substrate Defectivity on Epilayer Injected Carrier Lifetimes
p.481

Generation and Recombination Carrier Lifetimes in 4H SiC Epitaxial Wafers
p.485

Variations in the Measured Carrier Lifetimes of n^- 4H-SiC Epilayers
p.489

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Origin of Giant Step Bunching on 4H-SiC (0001)...

Origin of Giant Step Bunching on 4H-SiC (0001) Surfaces

Abstract:

To elucidate the origin of giant step bunching on 4˚ off-axis 4H-SiC (0001) faces, we carried out hydrogen etching and epitaxial growth under various conditions. We found that giant step bunching occurs during hydrogen etching and epitaxial growth at extremely low or high C/Si ratios, i.e., with an excessive supply of SiH4 or C3H8. From these results, we have proposed that the origins of giant step bunching are asymmetry in the step kinetics in etching and Si or C cluster generation on terraces during growth.