Effect of Gate Wet Reoxidation on Reliability and Channel Mobility of Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated on 4H-SiC(000-1)
p.791
p.791
Negative Field Reliability of ONO Gate Dielectric on 4H-SiC
p.795
p.795
TDDB Measurement of Gate SiO2 on 4H-SiC Formed by Chemical Vapor Deposition
p.799
p.799
Impact of Nitridation on Negative and Positive Charge Buildup in SiC Gate Oxides
p.803
p.803
Temperature-Dependence of SiC MOSFET Threshold-Voltage Instability
p.807
p.807
Characteristics of Sol-Gel Derived SiO2 Thick Film on 4H-SiC
p.811
p.811
New Chemical Planarization of SiC and GaN Using an Fe Plate in H2O2 Solution
p.815
p.815
Development of Lapping and Polishing Technologies of 4H-SiC Wafers for Power Device Applications
p.819
p.819
Improvements in Electrical Properties of SiC Surface Using Mechano-Chemical Polishing
p.823
p.823
Temperature-Dependence of SiC MOSFET Threshold-Voltage Instability
Abstract:
We have observed variations in the instability in the threshold voltage, VT, of SiC metaloxide semiconductor field-effect transistors (MOSFETs) from various sources and/or processes due to gate-bias stressing as a function of temperature. In some cases we see a dramatic increase in the instability with increasing temperature, consistent with interfacial charge trapping or de-trapping. In other cases the temperature response is very slight, and in still other cases we actually see VT instabilities that move in the opposite direction with bias, indicating the presence of mobile ions.
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Info:
Periodical:
Materials Science Forum (Volumes 600-603)
Pages:
807-810
Citation:
Online since:
September 2008
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