The Preparation of World-Class Single Crystal Silicon Carbide Wafers Using High Rate Chemical Mechanical Planarization Slurries
p.839
p.839
Beveling of Silicon Carbide Wafer by Plasma Chemical Vaporization Machining
p.843
p.843
Temperature Dependence of Plasma Chemical Vaporization Machining of Silicon and Silicon Carbide
p.847
p.847
Electric Discharge Machining for Silicon Carbide and Related Materials
p.851
p.851
Characterization of Electric Discharge Machining for Silicon Carbide Single Crystal
p.855
p.855
A Silicon Carbide Accelerometer for Extreme Environment Applications
p.859
p.859
An Examination of Material-Related Performance in SiC Heated Elements for IR Emitter and Sensor Applications
p.863
p.863
Mechanical Properties of Poly 3C-SiC Thin Films According to Carrier Gas (H2) Concentration
p.867
p.867
Novel Use of Columnar Porous Silicon Carbide Structures as Nanoimprint Lithography Stamps
p.871
p.871
Characterization of Electric Discharge Machining for Silicon Carbide Single Crystal
Abstract:
In this study, we report electric discharge machining (EDM) as a new cutting method for silicon carbide (SiC) single crystals. Moreover, we discuss characteristics and usefulness of the EDM for the SiC. The EDM realized not only high speed and smooth cutting but also lower surface damage. Defect propagation in the EDM SiCs have been also estimated by etch pits observation using molten KOH, however, we confirmed the EDM has caused no damage inside the SiCs in spite of high voltage and high temperature during the machining.
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Info:
Periodical:
Materials Science Forum (Volumes 600-603)
Pages:
855-858
Citation:
Online since:
September 2008
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