Development of Large Area (up to 1.5 cm2) 4H-SiC 10 kV Junction Barrier Schottky Rectifiers

Brett A. Hull; Joseph J. Sumakeris; Michael  J. O'Loughlin; Q. Jon Zhang; Jim Richmond; Adrian R. Powell; Michael J. Paisley; Valeri F. Tsvetkov; A. Hefner; Angel Rivera

doi:10.4028/www.scientific.net/MSF.600-603.931

Paper Titles

Challenges of 4H-SiC MOSFETs on the C(000-1) Face toward the Achievement of Ultra Low On-Resistance
p.907

Normally-Off 1400V/30A 4H-SiC DACFET and its Application to DC-DC Converter
p.913

Applications-Based Design of SiC Technology
p.919

New Applications in Power Electronics Based on SiC Power Devices
p.925

Development of Large Area (up to 1.5 cm²) 4H-SiC 10 kV Junction Barrier Schottky Rectifiers
p.931

Reliability Aspects of High Voltage 4H-SiC JBS Diodes
p.935

1200-V JBS Diodes with Low Threshold Voltage and Low Leakage Current
p.939

High-Current 10 kV SiC JBS Rectifier Performance
p.943

5 kV, 9.5 A SiC JBS Diodes with Non-Uniform Guard Ring Edge Termination for High Power Switching Application
p.947

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Development of Large Area (up to 1.5 cm2) 4H-SiC...

Development of Large Area (up to 1.5 cm²) 4H-SiC 10 kV Junction Barrier Schottky Rectifiers

Abstract:

DC characteristics and reverse recovery performance of 4H-SiC Junction Barrier Schottky (JBS) diodes capable of blocking in excess of 10 kV with forward conduction of 20 A at a forward voltage of less than 4 V are described. Performance comparisons are made to a similarly rated 10 kV 4H-SiC PiN diode. The JBS diodes show a significant improvement in reverse recovery stored charge as compared to PiN diodes, showing half of the stored charge at 25°C and a quarter of the stored charge at 125°C when switched to 3 kV blocking. These large area JBS diodes were also employed to demonstrate the tremendous advances that have recently been made in 4H-SiC substrate quality.