Shallow Defects Observed in As-Grown and Electron-Irradiated or He+-Implanted Al-Doped 4H-SiC Epilayers

Svetlana Beljakowa; Sergey A. Reshanov; Bernd Zippelius; M. Krieger; Gerhard Pensl; Katsunori Danno; Tsunenobu Kimoto; Shinobu Onoda; Takeshi Ohshima; Fei Yan; Robert P. Devaty; Wolfgang J. Choyke

doi:10.4028/www.scientific.net/MSF.645-648.427

Paper Titles

New Lines and Issues Associated with Deep Defect Spectra in Electron, Proton and ⁴He Ion Irradiated 4H SiC
p.411

LTPL Investigation of N-Ga and N-Al Donor-Acceptor Pair Spectra in 3C-SiC Layers Grown by VLS on 6H-SiC Substrates
p.415

Thermal Histories of Defect Centers as Measured by Low Temperature Photoluminescence in n- and p-Type 4H SiC Epilayers Generated by Irradiation with 170 keV or 1 MeV Electrons
p.419

Thermal Stability of Defect Centers in n- and p-Type 4H-SiC Epilayers Generated by Irradiation with High-Energy Electrons
p.423

Shallow Defects Observed in As-Grown and Electron-Irradiated or He⁺-Implanted Al-Doped 4H-SiC Epilayers
p.427

A Laterally Resolved DLTS Study of Intrinsic Defect Diffusion in 4H-SiC after Low Energy Focused Proton Beam Irradiation
p.431

Metastable Defects in Low-Energy Electron Irradiated n-Type 4H-SiC
p.435

Deep Defects in 3C-SiC Generated by H⁺- and He⁺-Implantation or by Irradiation with High-Energy Electrons
p.439

Optical Characterization of VLS+CVD Grown 3C-SiC Films by Non-Linear and Photoluminescence Techniques
p.443

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Shallow Defects Observed in As-Grown and...

Shallow Defects Observed in As-Grown and Electron-Irradiated or He⁺-Implanted Al-Doped 4H-SiC Epilayers

Abstract:

Aluminum-doped 4H-SiC samples were either irradiated with high-energy electrons (170 keV or 1 MeV) or implanted with a box-shaped He+-profile. Admittance spectroscopy (AS) and deep level transient spectroscopy (DLTS) were employed to search for defect centers. AS spectra of as-grown as well as of electron-irradiated (170 keV or 1 MeV) 4H-SiC epilayers reveal the Al acceptor (ΔE(Al) = 200 meV) and an unknown defect (ΔE(SB) = 177 meV), while AS spectra of the He+-implanted and annealed sample show in addition to the Al-acceptor two energetically deeper acceptor-like defect centers (ΔE(RE3) = 255 meV and ΔE(KR3) = 375 meV). The KR3-center is not directly formed by the He+-implantation, it requires an annealing process. The DLTS spectra of the He+-implanted and annealed sample resolve a double-peak structure of the KR3-defect (ΔE(KR3A) = 380 meV and ΔE(KR3B) = 410 meV).