Recent Advances in Surface Preparation of Silicon Carbide and other Wide Band Gap Materials

Marcin Zielinski; Catherine Moisson; Sylvain Monnoye; Hugues Mank; Thierry Chassagne; Sebastien Roy; Anne Elisabeth Bazin; Jean François Michaud; Marc Portail

doi:10.4028/www.scientific.net/MSF.645-648.753

Paper Titles

Reliability Tests of Au-Metallized Ni-Based Ohmic Contacts to 4H-n-SiC with and without Nanocomposite Diffusion Barriers
p.737

SiC-Die-Attachment for High Temperature Applications
p.741

Characteristics of Gold Wire Bonds with Ti- and Ni-Based Contact Metallization to n-SiC for High Temperature Applications
p.745

Development of a Wire-Bond Technology for SiC High Temperature Applications
p.749

Recent Advances in Surface Preparation of Silicon Carbide and other Wide Band Gap Materials
p.753

Reactive-Ion-Etching Induced Deep Levels Observed in n-Type and p-Type 4H-SiC
p.759

Morphology Improvement of Step Bunching on 4H-SiC Wafers by Polishing Technique
p.763

Fabrication and Use of Atomically Smooth Steps on 6H-SiC for Calibration of z-Displacements in Scanning Probe Microscopy
p.767

Hexagonality and Stacking Sequence Dependence of Etching Properties in Cl₂-O₂-SiC System
p.771

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Recent Advances in Surface Preparation of Silicon...

Recent Advances in Surface Preparation of Silicon Carbide and other Wide Band Gap Materials

Abstract:

In this contribution we recapitulate the state of the art of silicon carbide and related materials polishing. Since the demonstration (by Vicente et al) of an ultimate preparation of Si-face -SiC wafers some important progresses were made in the field of surface preparation of silicon carbide and related materials. This concerns the industrial, high output treatments of substrates of increasing size, as well as the research studies of the feasibility of new preparation approaches for wide band gap materials. We also discuss the problems related to the polishing of the polycrystalline material and to the planarization of epilayers.

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Silicon Carbide and Related Materials 2009

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Periodical:

Materials Science Forum (Volumes 645-648)

Pages:

753-758

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.645-648.753

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Online since:

April 2010

Authors:

Marcin Zielinski, Catherine Moisson, Sylvain Monnoye, Hugues Mank, Thierry Chassagne, Sebastien Roy, Anne Elisabeth Bazin, Jean François Michaud, Marc Portail

Keywords:

Chemical Mechanical Polishing (CMP), Roughness

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