High Voltage 4H-SiC BJTs with Deep Mesa Edge Termination
p.710
p.710
600V-30A 4H-SiC JBS and Si IGBT Hybrid Module
p.714
p.714
Lifetime Control of 4.5 kV SiCGT by High-Energy Electron Irradiation
p.718
p.718
Performance Tests of a 4,1x4,1mm2 SiC LCVJFET for a DC/DC Boost Converter Application
p.722
p.722
High Temperature Silicon Carbide CMOS Integrated Circuits
p.726
p.726
300°C Silicon Carbide Integrated Circuits
p.730
p.730
4H-SiC N-MOSFET Logic Circuits for High Temperature Operation
p.734
p.734
Forced-Air-Cooled 10 kW Three-Phase SiC Inverter with Output Power Density of More than 20 kW/L
p.738
p.738
Thermal Management versus Full Isolation: Trade Off in Packaging Technologies of Modern SiC Diodes
p.742
p.742
High Temperature Silicon Carbide CMOS Integrated Circuits
Abstract:
The wide band-gap of Silicon Carbide (SiC) makes it a material suitable for high temperature integrated circuits [1], potentially operating up to and beyond 450°C. This paper describes the development of a 15V SiC CMOS technology developed to operate at high temperatures, n and p-channel transistor and preliminary circuit performance over temperature achieved in this technology.
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Info:
Periodical:
Materials Science Forum (Volumes 679-680)
Pages:
726-729
Citation:
Online since:
March 2011
Keywords:
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