Electrical Characteristics of SiC UV-Photodetector Device from the P-I-N Structure Behaviour to the Junction Barrier Schottky Structure Behaviour

Stéphane Biondo; Mihai Lazar; Laurent Ottaviani; Wilfried Vervisch; Olivier Palais; R. Daineche; Dominique Planson; F. Milesi; J. Duchaine; Franck Torregrosa

doi:10.4028/www.scientific.net/MSF.711.114

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HomeMaterials Science ForumMaterials Science Forum Vol. 711Electrical Characteristics of SiC UV-Photodetector...

Electrical Characteristics of SiC UV-Photodetector Device from the P-I-N Structure Behaviour to the Junction Barrier Schottky Structure Behaviour

Abstract:

In this paper, we deal with the study of Ultra Violet (UV) photodetector device based on SiC material undergoing a p-i-n structure process. Current density-voltage (J-V) measurements in reverse and forward bias, are performed on the UV photodetector device. Due to a very thin p⁺-type doping layer, a high reactivation annealing and the metallic contact deposit, experimental measurements point out Junction Barrier Schottky (JBS) device behaviour in spite of the p-i-n structure device process. To understand this involuntary phenomenon, these experimental characteristics are accompanied with an experimental study by the SIMS analysis.

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Materials Science Forum (Volume 711)

Pages:

114-117

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.711.114

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Online since:

January 2012

Authors:

Stéphane Biondo, Mihai Lazar, Laurent Ottaviani, Wilfried Vervisch, Olivier Palais, R. Daineche, Dominique Planson, F. Milesi, J. Duchaine, Franck Torregrosa

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