690V, 1.00 mΩcm2 4H-SiC Double-Trench MOSFETs

Yuki Nakano; R. Nakamura; H. Sakairi; Shuhei Mitani; T. Nakamura

doi:10.4028/www.scientific.net/MSF.717-720.1069

Paper Titles

Fabrication Issues of 4H-SiC Static Induction Transistors
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High Performance SiC IEMOSFET/SBD Module
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Development of 1200 V, 3.7 mΩ-cm² 4H-SiC DMOSFETs for Advanced Power Applications
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High-Temperature Performance of 1200 V, 200 A 4H-SiC Power DMOSFETs
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690V, 1.00 mΩcm² 4H-SiC Double-Trench MOSFETs
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SiC MOSFET Reliability Update
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Material Defects and Rugged Electrical Power Switching in Semiconductors
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Comparative Study of SiC MOSFETs in High Voltage Switching Operation
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Charge Trapping in Sic Power MOSFETs and its Consequences for Robust Reliability Testing
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HomeMaterials Science ForumMaterials Science Forum Vols. 717-720690V, 1.00 mΩcm2 4H-SiC Double-Trench MOSFETs

690V, 1.00 mΩcm² 4H-SiC Double-Trench MOSFETs

Abstract:

The trench gate structure MOSFET, with its lack of JFET resistance, is one of the structures able to achieve low on-state resistance [1,2]. In 2008, this group succeeded in fabricating 790V SiC trench MOSFETs with the lowest R_on,sp (1.7 mΩcm²) at room temperature. However these devices had issues regarding oxide destruction at the trench bottom during high drain-source voltage application. In order to improve this problem, this group developed the double-trench MOSFET structure. This structure has both source trenches and gate trenches. This paper compares two kinds of trench MOSFETs: the conventional, single trench structure and a double-trench structure. Also, the latest characteristics are presented.