Development of 15 kV 4H-SiC IGBTs

Sei Hyung Ryu; Lin Cheng; Sarit Dhar; Craig Capell; Charlotte  Jonas; Jack Clayton; Matt Donofrio; Michael  J. O'Loughlin; Albert A. Burk; Anant K. Agarwal; John W. Palmour

doi:10.4028/www.scientific.net/MSF.717-720.1135

Paper Titles

Enhanced Current Gain (>250) in 4H-SiC Bipolar Junction Transistors by a Deep-Level-Reduction Process
p.1117

Large Area 1200 V SiC BJTs with β>100 and ρ_ON<3 mΩcm²
p.1123

1200 V-Class 4H-SiC “Super” Junction Transistors with Current Gains of 88 and Ultra-Fast Switching Capability
p.1127

Investigation of Current Gain Degradation in 4H-SiC Power BJTs
p.1131

Development of 15 kV 4H-SiC IGBTs
p.1135

Ultra high performance of 12kV Clustered Insulated Gate Bipolar Transistor (CIGBT) in 4H-SiC
p.1139

An Investigation of Material Limit Characteristics of SiC IGBTs
p.1143

Improved Energy Efficiency Using an IGBT/SiC-Schottky Diode Pair
p.1147

12 kV, 1 cm² SiC GTO Thyristors with Negative Bevel Termination
p.1151

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Development of 15 kV 4H-SiC IGBTs

Development of 15 kV 4H-SiC IGBTs

Abstract:

We present our latest developments in ultra high voltage 4H-SiC IGBTs. A 6.7 mm x 6.7 mm 4H-SiC N-IGBT with an active area of 0.16 cm2 showed a blocking voltage of 12.5 kV, and demonstrated a room temperature differential specific on-resistance of 5.3 mΩ-cm2 with a gate bias of 20 V. A 4H-SiC P-IGBT exhibited a record high blocking voltage of 15 kV, while showing a differential specific on-resistance of 24 mΩ-cm2. A comparison between P- and N- IGBTs in 4H-SiC is provided in this paper.