Bipolar Integrated OR-NOR Gate in 4H-SiC

Luigia Lanni; Reza Ghandi; Carl-Mikael Zetterling; B. Gunnar Malm; Mikael Östling

doi:10.4028/www.scientific.net/MSF.717-720.1257

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HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Bipolar Integrated OR-NOR Gate in 4H-SiC

Bipolar Integrated OR-NOR Gate in 4H-SiC

Abstract:

An integrated bipolar OR-NOR gate based on emitter coupled logic (ECL) is demonstrated in 4H-SiC. Operated from 27 up to 300 °C on –15 V supply voltage the logic gate exhibits stable noise margins (NMs) of about 1 V in the entire temperature range.

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Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

1257-1260

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.1257

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Cite this paper

Online since:

May 2012

Authors:

Luigia Lanni, Reza Ghandi, Carl-Mikael Zetterling, B. Gunnar Malm, Mikael Östling

Keywords:

Emitter Coupled Logic (ECL), High Temperature Integrated Circuit (IC), SiC ICs, Silicon Carbide (SiC)

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