Crystallinity Evaluation of 4H-SiC Single Crystal Grown by Solution Growth Technique Using Si-Ti-C Solution

Kazuhito Kamei; Kazuhiko Kusunoki; Nobuyuki Yashiro; Nobuhiro Okada; Koji Moriguchi; H. Daikoku; M. Kado; H. Suzuki; H. Sakamoto; T. Bessho

doi:10.4028/www.scientific.net/MSF.717-720.45

Paper Titles

Effect of Nitrogen Doping on the Growth of 4H Polytype on the 6H-SiC Seed by PVT Method
p.29

Lateral Growth Expansion of 4H/6H-SiС M-Plane Pseudo Fiber Crystals by Hot Wall CVD Epitaxy
p.33

Synthesis and Purification of Silicon Carbide Powders for Crystal Growth
p.37

Bulk and Surface Effects on the Polytype Stability in SiC Crystals
p.41

Crystallinity Evaluation of 4H-SiC Single Crystal Grown by Solution Growth Technique Using Si-Ti-C Solution
p.45

SiC Growth by Solvent-Laser Heated Floating Zone
p.49

Stable Growth of 4H-SiC Single Polytype by Controlling the Surface Morphology Using a Temperature Gradient in Solution Growth
p.53

Control of Void Formation in 4H-SiC Solution Growth
p.57

Top-Seeded Solution Growth of 4H-SiC Bulk Crystal Using Si-Cr Based Melt
p.61

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Crystallinity Evaluation of 4H-SiC Single Crystal...

Crystallinity Evaluation of 4H-SiC Single Crystal Grown by Solution Growth Technique Using Si-Ti-C Solution

Abstract:

Crystallinity of 4H-SiC bulk crystal obtained by solution growth technique was characterized mainly by KOH etching of the off-ground and serially ground specimen. Marked reduction of basal plane dislocation, threading edge and screw dislocations during the growth of on-axis crystal was confirmed. Cross-sectional TEM observation revealed the rapid reduction behavior of threading dislocations microscopically. AFM observation of as-grown morphology showed that screw dislocation dipoles is related to the reduction of threading screw dislocations and single domain formation, which is essential for establishing the high crystallinity.