Formation of Nanovoids in Femtosecond Laser-Irradiated Single Crystals of Silicon Carbide
p.19
p.19
Electron Beam Induced Current Observation of Dislocations in 4H-SiC Introduced by Mechanical Polishing
p.23
p.23
Basal Plane Dislocations in 4H-SiC Epilayers with Different Dopings
p.27
p.27
Frank Partial Dislocation in 4H-SiC Epitaxial Layer by MSE Method
p.31
p.31
Separation of the Driving Force and Radiation-Enhanced Dislocation Glide in 4H-SiC
p.35
p.35
Study of Defects Generated by Standard- and Plasma-Implantation of Nitrogen Atoms in 4H-SiC Epitaxial Layers
p.41
p.41
Different Dissociation Behavior of [11-20] and Non-[11-20] Basal Plane Dislocations in 4H-SiŠ” under Electron Beam Irradiation
p.45
p.45
Density of Etch Pits on C-Face 4H-SiC Surface Produced by ClF3 Gas
p.49
p.49
Defect Related Leakage Current Components in SiC Schottky Barrier Diode
p.53
p.53
Separation of the Driving Force and Radiation-Enhanced Dislocation Glide in 4H-SiC
Abstract:
Anomalous expansion of stacking faults (SFs) induced in 4H-SiC under electronic excitations is driven by an electronic force and is achieved by enhanced glide of partial dislocations. An experimental attempt to separate the two physically different effects has been made by conducting photoluminescence (PL) mapping experiments which allowed simultaneous measurements of partial dislocation velocity and SF-originated PL intensity the latter of which is proposed to be related to the driving force for SF expansion through the density of free excitons planarly confined in the SF.
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Info:
Periodical:
Materials Science Forum (Volume 725)
Pages:
35-40
Citation:
Online since:
July 2012
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