Study of Defects Generated by Standard- and Plasma-Implantation of Nitrogen Atoms in 4H-SiC Epitaxial Layers

Laurent Ottaviani; Michel Kazan; Stephane Biondo; Filip Tuomisto; Frédéric Milesi; Julian Duchaine; Frank Torregrosa; Olivier Palais

doi:10.4028/www.scientific.net/MSF.725.41

Paper Titles

Electron Beam Induced Current Observation of Dislocations in 4H-SiC Introduced by Mechanical Polishing
p.23

Basal Plane Dislocations in 4H-SiC Epilayers with Different Dopings
p.27

Frank Partial Dislocation in 4H-SiC Epitaxial Layer by MSE Method
p.31

Separation of the Driving Force and Radiation-Enhanced Dislocation Glide in 4H-SiC
p.35

Study of Defects Generated by Standard- and Plasma-Implantation of Nitrogen Atoms in 4H-SiC Epitaxial Layers
p.41

Different Dissociation Behavior of [11-20] and Non-[11-20] Basal Plane Dislocations in 4H-SiС under Electron Beam Irradiation
p.45

Density of Etch Pits on C-Face 4H-SiC Surface Produced by ClF₃ Gas
p.49

Rapid Terahertz Imaging of Carrier Density of 3C-SiC
p.57

HomeMaterials Science ForumMaterials Science Forum Vol. 725Study of Defects Generated by Standard- and...

Study of Defects Generated by Standard- and Plasma-Implantation of Nitrogen Atoms in 4H-SiC Epitaxial Layers

Abstract:

A comparison is made between two kinds of Nitrogen implantations for the formation of thin n+p junctions in p-type Silicon Carbide (SiC) epitaxial layers. The standard beam ion implantations and PULSIONTM processes were performed at two distinct energies (700 eV and 7 keV) and the subsequent annealing was held at 1600°C in a resistive furnace specifically adapted to SiC material. Positron Annihilation Spectroscopy (PAS) and unpolarized infrared reflectivity (IR) measurements were carried out before and after the annealing, respecively. Despite the presence of deep vacancy clusters near the as-implanted sample surfaces, no extended defects were detected after the annealing. Plasma implanted samples prove to contain a lower point defect concentration than beam implanted samples. The concentration of these defects (resulting from plasma process) is higher in the plane parallel to the optical axis, which denotes an energy spreading alongside the dopant distribution.

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Periodical:

Materials Science Forum (Volume 725)

Pages:

41-44

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.725.41

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Online since:

July 2012

Authors:

Laurent Ottaviani, Michel Kazan, Stephane Biondo, Filip Tuomisto, Frédéric Milesi, Julian Duchaine, Frank Torregrosa, Olivier Palais

Keywords:

Defect, Free Carriers, Infrared, Ion Implantation, Nitrogen, Plasma, Silicon Carbide (SiC)

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