Determination of the Electrical Capture Process of the EH6-Center in n-Type 4H-SiC

Jonas Weber; Svetlana Beljakowa; Heiko B. Weber; Gerhard Pensl; Bernd Zippelius; Tsunenobu Kimoto; M. Krieger

doi:10.4028/www.scientific.net/MSF.740-742.377

Paper Titles

An EPR Study of Defects in Neutron-Irradiated Cubic SiC Crystals
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An Extended EDMR Setup for SiC Defect Characterization
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Comparative Analysis of Defect Formation in Silicon Carbide under Electron and Proton Irradiation
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Deep Levels in P-Type 4H-SiC Induced by Low-Energy Electron Irradiation
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Determination of the Electrical Capture Process of the EH₆-Center in n-Type 4H-SiC
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Diffusion Study of Chlorine in SiC by First Principles Calculations
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Electron Paramagnetic Resonance Studies of Nb in 6H-SiC
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EPR Study of the Nitrogen Containing Defect Center Created in Self-Assembled 6H SiC Nanostructure
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Kinetic Monte Carlo Simulation of Impurity Effects on Nucleation and Growth of SiC Clusters on Si(100)
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HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Determination of the Electrical Capture Process of...

Determination of the Electrical Capture Process of the EH₆-Center in n-Type 4H-SiC

Abstract:

Deep Level Transient Spectroscopy (DLTS) investigations at different temperatures and with various filling pulse lengths were performed on n-type 4H-SiC epitaxial layers using Iridium Schottky contacts to determine the electrical capture process of the EH₆-center. The temperature dependence of the electrical capture cross section σ ~ T^-2.0 suggests a cascade capture process, which is not thermally activated. Together with earlier work by Zippelius et al. [4] this proves the acceptor-type of the EH₆-center.

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Silicon Carbide and Related Materials 2012

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Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

377-380

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.377

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Online since:

January 2013

Authors:

Jonas Weber, Svetlana Beljakowa, Heiko B. Weber, Gerhard Pensl, Bernd Zippelius, Tsunenobu Kimoto, M. Krieger

Keywords:

EH₆-Center, Electrical Capture Cross Section

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References

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