A New-Type of Defect Generation at a 4H-SiC/SiO2 Interface by Oxidation Induced Compressive Strain

Kenta Chokawa; Shigenori  Kato; Katsumasa  Kamaiya; Kenji  Shiraishi

doi:10.4028/www.scientific.net/MSF.740-742.469

Paper Titles

The Integrated Evaluation Platform for SiC Wafers and Epitaxial Films
p.451

Theoretical Study of N Incorporation Effect during SiC Oxidation
p.455

To the Experimental Determination of the Spontaneous Polarization for the Silicon Carbide Polytypes
p.459

A Comparison of Free Carrier Absorption and Capacitance Voltage Methods for Interface Trap Measurements
p.465

A New-Type of Defect Generation at a 4H-SiC/SiO₂Interface by Oxidation Induced Compressive Strain
p.469

Characterization of the Metal-Semiconductor Interface of Pt-GaN Diode Hydrogen Sensors
p.473

Deep-Level-Transient Spectroscopy Characterization of Mobility-Limiting Traps in SiO₂/SiC Interfaces on C-Face 4H-SiC
p.477

Dislocation Analysis of 4H-/6H-SiC Single Crystals Using Micro-Raman Spectroscopy
p.481

Effect of Interface Native Oxide Layer on the Properties of Annealed Ni/SiC Contacts
p.485

HomeMaterials Science ForumMaterials Science Forum Vols. 740-742A New-Type of Defect Generation at a 4H-SiC/SiO2...

A New-Type of Defect Generation at a 4H-SiC/SiO₂Interface by Oxidation Induced Compressive Strain

Abstract:

Our message is oxidation process must be minimized as possible. Many carbon-related defect structures are reported in SiC/SiO2 interface. In this paper, we investigated the effect of oxidation to the defect forming by density functional theory (DFT). In the result, we found carbon defect structure that completely different from in the present report. This defect structure has carbon-carbon single bond with no dangling bond. To see the forming process, compressive strain from inserted oxygen atoms induce the rearrangement of structure and cause C-C defect structure. We can know that this structure is formed with energy gain about 3.8eV. And this C-C defect induces trap state under the conduction bottoms.

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Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

469-472

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.469

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Online since:

January 2013

Authors:

Kenta Chokawa, Shigenori Kato, Katsumasa Kamaiya, Kenji Shiraishi

Keywords:

4H-SiC, Carbon-Carbon Bond, Defect Structure, Density Functional Theory (DFT), Interface, Oxidation

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