Effect of Surface and Interface Recombination on Carrier Lifetime in 6H-SiC Layers
p.490
p.490
Effects of Growth Parameters on SiC/SiO2 Core/Shell Nanowires Radial Structures
p.494
p.494
Electron Transport Features in Heterostructures 3C-SiC(n)/Si(p) at the Elevated Temperatures
p.498
p.498
Impact of AlN Spacer on Electron Mobility of AlGaN/AlN/GaN Structures on Silicon
p.502
p.502
Improvement of Interface State and Channel Mobility Using 4H-SiC (0-33-8) Face
p.506
p.506
Study of Terminated Species on 4H-SiC (0001) Surfaces Planarized by Catalyst-Referred Etching
p.510
p.510
XPS Analysis of 4H-SiC Surfaces Oxidized by Helium-Based Atmospheric-Pressure Water Vapor Plasma for Plasma-Assisted Polishing
p.514
p.514
Electrical Impact of the Aluminum P-Implant Annealing on Lateral MOSFET Transistors on 4H-SiC N-Epi
p.521
p.521
Hall Effect Characterization of 4H-SiC MOSFETs: Influence of Nitrogen Channel Implantation
p.525
p.525
Improvement of Interface State and Channel Mobility Using 4H-SiC (0-33-8) Face
Abstract:
In this paper, we characterized MOS devices fabricated on 4H-SiC (0-33-8) face. The interface state density of SiO2/4H-SiC(0-33-8) was significantly low compared to that of SiO2/4H-SiC(0001). The field-effect channel mobility obtained from lateral MOSFET (LMOSFET) was 80 cm2/Vs, in spite of a high p-well concentration of 5x1017 cm-3 (implantation). The double implanted MOSFET (DMOSFET) fabricated on 4H-SiC(0-33-8) showed a specific on-resistance of 4.0 mΩcm2 with a blocking voltage of 890 V.
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Info:
Periodical:
Materials Science Forum (Volumes 740-742)
Pages:
506-509
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Online since:
January 2013
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