Absence of Back Stress Effect in the PVT Growth of 6H Silicon Carbide
p.48
p.48
Modeling of the Mass Transport during Homo-Epitaxial Growth of Silicon Carbide by Fast Sublimation Epitaxy
p.52
p.52
The Study of the Geometry and Growth Trend of Silicon Carbide Crystals
p.56
p.56
Structural Perfection of Silicon Carbide Crystals Grown on Profiled Seeds by Sublimation Method
p.60
p.60
Growth of Large Diameter 4H-SiC by TSSG Technique
p.65
p.65
SiC Sublimation Growth at Small Spacing between Source and Seed
p.69
p.69
High-Speed Growth of 4H-SiC Single Crystal Using Si-Cr Based Melt
p.73
p.73
The Effect of Modified Crucible Design and Seed Attachment on SiC Crystal Grown by PVT
p.77
p.77
Sublimation Growth of AlN and GaN Bulk Crystals on SiC Seeds
p.81
p.81
Growth of Large Diameter 4H-SiC by TSSG Technique
Abstract:
4H-SiC single crystal with 3-inch diameter was grown by top seeded solution growth (TSSG) technique. We used a new convection control member called “Immersion Guide (IG)” which causes the high and homogenous fluid flow in the solution. As a result, we achieved relatively high growth rate and morphological stability
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Info:
Periodical:
Materials Science Forum (Volumes 740-742)
Pages:
65-68
Citation:
Online since:
January 2013
Keywords:
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