High-Speed Growth of 4H-SiC Single Crystal Using Si-Cr Based Melt

Motohisa Kado; Hironori Daikoku; Hidemitsu Sakamoto; Hiroshi Suzuki; Takeshi Bessho; Nobuyoshi Yashiro; Kazuhiko Kusunoki; Nobuhiro Okada; Kouji Moriguchi; Kazuhito Kamei

doi:10.4028/www.scientific.net/MSF.740-742.73

Paper Titles

The Study of the Geometry and Growth Trend of Silicon Carbide Crystals
p.56

Structural Perfection of Silicon Carbide Crystals Grown on Profiled Seeds by Sublimation Method
p.60

Growth of Large Diameter 4H-SiC by TSSG Technique
p.65

SiC Sublimation Growth at Small Spacing between Source and Seed
p.69

High-Speed Growth of 4H-SiC Single Crystal Using Si-Cr Based Melt
p.73

The Effect of Modified Crucible Design and Seed Attachment on SiC Crystal Grown by PVT
p.77

Sublimation Growth of AlN and GaN Bulk Crystals on SiC Seeds
p.81

Growth of Low-Defect SiC and AlN Crystals in Refractory Metal Crucibles
p.85

Defect Generation Mechanisms in PVT-Grown AlN Single Crystal Boules
p.91

HomeMaterials Science ForumMaterials Science Forum Vols. 740-742High-Speed Growth of 4H-SiC Single Crystal Using...

High-Speed Growth of 4H-SiC Single Crystal Using Si-Cr Based Melt

Abstract:

In this study, we have investigated the rate-limiting process of 4H-SiC solution growth using Si-Cr based melt, and have tried high-speed growth. It is revealed that the rate-limiting process of SiC growth under our experimental condition is interface kinetics, which can be controlled by such factors as temperature and supersaturation of carbon. By enhancing the interface kinetics, SiC crystal has been grown at a high rate of 2 mm/h. The FWHM values of X-ray rocking curves and threading dislocation density of the grown crystals are almost the same as those of seed crystal. Possibility of high-speed and high-quality growth of 4H-SiC has been indicated.