Fabrication of a P-Channel SiC-IGBT with High Channel Mobility

Shuji Katakami; Hiroyuki Fujisawa; Kensuke Takenaka; Hitoshi Ishimori; Shinji Takasu; Mitsuo Okamoto; Manabu Arai; Yoshiyuki Yonezawa; Kenji Fukuda

doi:10.4028/www.scientific.net/MSF.740-742.958

Paper Titles

Steady-State Analysis of a Normally-Off 4H-SiC Trench Bipolar-Mode FET
p.942

Evaluation of the Drive Circuit for a Dual Gate Trench SiC JFET
p.946

On-State and Switching Performance Comparison of A 600 V-Class Hybrid SiC JFET and Si Superjunction MOSFETs
p.950

15 kV IGBTs in 4H-SiC
p.954

Fabrication of a P-Channel SiC-IGBT with High Channel Mobility
p.958

Experimental Study of Short-Circuit Capability of Normally-off SiC-BGSITs
p.962

High-Temperature Characterization of 4H-SiC Darlington Transistors for Low Voltage Applications
p.966

1200 V, 3.3 mΩ SiC Bipolar Junction Transistor Power Modules
p.970

Area-Optimized JTE for 4.5 kV Non Ion-Implanted 4H-SiC BJT
p.974

HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Fabrication of a P-Channel SiC-IGBT with High...

Fabrication of a P-Channel SiC-IGBT with High Channel Mobility

Abstract:

We fabricated and characterized an ultrahigh voltage (>10kV) p-channel silicon carbide insulated gate bipolar transistor (SiC-IGBT) with high channel mobility. Higher field-effect channel mobility of 13.5 cm²/Vs was achieved by the combination of adopting an n-type base layer with a retrograde doping profile and additional wet re-oxidation annealing (wet-ROA) at 1100°C in the gate oxidation process. The on-state characteristics of the p-channel SiC-IGBT at 200°C showed the low differential specific on-resistance of 24 mΩcm² at V_G = -20 V. The forward blocking voltage of the p-channel SiC-IGBT at 25°C was 10.2 kV a the leakage current density of 1.0 μA/cm².