15 kV, Large Area (1 cm2), 4H-SiC p-Type Gate Turn-Off Thyristors

Lin Cheng; Anant K. Agarwal; Craig Capell; Michael J. O'Loughlin; Khiem Lam; Jon Zhang; Jim Richmond; Albert A. Burk; John W. Palmour; Aderinto Ogunniyi; Heather O’Brien; Charles Scozzie

doi:10.4028/www.scientific.net/MSF.740-742.978

Paper Titles

Experimental Study of Short-Circuit Capability of Normally-off SiC-BGSITs
p.962

High-Temperature Characterization of 4H-SiC Darlington Transistors for Low Voltage Applications
p.966

1200 V, 3.3 mΩ SiC Bipolar Junction Transistor Power Modules
p.970

Area-Optimized JTE for 4.5 kV Non Ion-Implanted 4H-SiC BJT
p.974

15 kV, Large Area (1 cm²), 4H-SiC p-Type Gate Turn-Off Thyristors
p.978

Development of High-Voltage 4H-SiC GTOs for Grid-Tied Solar Inverters
p.982

Pulse Current Characterization of SiC GTO Thyristors with Etched JTE
p.986

Optical Triggering of 12 kV 1 cm² 4H-SiC Thyristors
p.990

Optimization of Holding Current in 4H-SiC Thyristors
p.994

HomeMaterials Science ForumMaterials Science Forum Vols. 740-74215 kV, Large Area (1 cm2), 4H-SiC p-Type Gate...

15 kV, Large Area (1 cm²), 4H-SiC p-Type Gate Turn-Off Thyristors

Abstract:

In this paper, we report our recently developed 1 cm², 15 kV SiC p-GTO with an extremely low differential on-resistance (_RON,diff) of 4.08 mΩ•cm² at a high injection-current density (J_AK) of 600 ~ 710 A/cm². The 15 kV SiC p-GTO was built on a 120 μm, 2×10¹⁴/cm³ doped p-type SiC drift layer with a device active area of 0.521 cm². Forward conduction of the 15 kV SiC p-GTO was characterized at 20°C and 200°C. Over this temperature range, the R_ON,diff at J_AK of 600 ~ 710 A/cm² decreased from 4.08 mΩ•cm² at 20°C to 3.45 mΩ•cm² at J_AK of 600 ~ 680 A/cm² at 200°C. The gate to cathode blocking voltage (V_GK) was measured using a customized high-voltage test set-up. The leakage current at a V_GK of 15 kV were measured 0.25 µA and 0.41 µA at 20°C and 200°C respectively.

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Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

978-981

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.978

Citation:

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Online since:

January 2013

Authors:

Lin Cheng, Anant K. Agarwal, Craig Capell, Michael J. O'Loughlin, Khiem Lam, Jon Zhang, Jim Richmond, Albert A. Burk, John W. Palmour, Aderinto Ogunniyi, Heather O’Brien, Charles Scozzie

Keywords:

Carrier Lifetime, Gate Turn-Off Thyristor, GTO, High Injection-Current, High Voltage (HV), High-Temperature, Silicon Carbide (SiC)

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