Post-Growth Reduction of Basal Plane Dislocations by High Temperature Annealing in 4H-SiC Epilayers
p.324
p.324
Measurement of Critical Thickness for the Formation of Interfacial Dislocations and Half Loop Arrays in 4H-SiC Epilayer via X-Ray Topography
p.328
p.328
Study of V and Y Shape Frank-Type Stacking Faults Formation in 4H-SiC Epilayer
p.332
p.332
Three-Dimensional Imaging of Extended Defects in 4H-SiC by Optical Second-Harmonic Generation
p.338
p.338
Driving Force of Stacking Fault Expansion in 4H-SiC PN Diode by In Situ Electroluminescence Imaging
p.342
p.342
Dislocation Revelation for 4H-SiC by Using Vaporized NaOH: A Possible Way to Distinguish Edge, Screw and Mixed Threading Dislocations by Etch Pit Method
p.346
p.346
TEM Observation of Defect Structure of Low-Energy Ion Implanted SiC
p.350
p.350
Structure and Origin of Carrot Defects on 4H-SiC Homoepitaxial Layers
p.354
p.354
Dislocation Analysis of 4H-SiC Using KOH Low Temperature Etching
p.358
p.358
Driving Force of Stacking Fault Expansion in 4H-SiC PN Diode by In Situ Electroluminescence Imaging
Abstract:
We evaluate the velocity of stacking faults (SFs) expansion under various current and temperature levels on the pn diodes by electroluminescence (EL) observation in situ. The driving force of the SFs expansion is analyzed on the basis of the experimental results. The velocity of the SFs expansion increases in proportional to the current density at the every junction temperature levels. The activation energy for the velocity of the SFs expansion is estimated.
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Info:
Periodical:
Materials Science Forum (Volumes 778-780)
Pages:
342-345
Citation:
Online since:
February 2014
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