Monolithic Integration of Power MESFET for High Temperature SiC Integrated Circuits
p.891
p.891
SiC Current Limiting FETs (CLFs) for DC Applications
p.895
p.895
3 kV Normally-Off 4H-SiC Buried Gate Static Induction Transistors (SiC-BGSITs)
p.899
p.899
1700V, 5.5mOhm-cm2 4H-SiC DMOSFET with Stable 225°C Operation
p.903
p.903
A Novel Truncated V-Groove 4H-SiC MOSFET with High Avalanche Breakdown Voltage and Low Specific on-Resistance
p.907
p.907
40mΩ / 1700V DioMOS (Diode in SiC MOSFET) for High Power Switching Applications
p.911
p.911
Blocking Characteristics of 2.2 kV and 3.3 kV-Class 4H-SiC MOSFETs with Improved Doping Control for Edge Termination
p.915
p.915
4H-SiC Trench MOSFET with Bottom Oxide Protection
p.919
p.919
SiC Trench MOSFET with an Integrated Low Von Unipolar Heterojunction Diode
p.923
p.923
A Novel Truncated V-Groove 4H-SiC MOSFET with High Avalanche Breakdown Voltage and Low Specific on-Resistance
Abstract:
A breakdown of a conventional trench SiC-MOSFET is caused by oxide breakdown at the bottom of the trench. We have fabricated a novel trench SiC-MOSFET with buried p+ regions and demonstrated the high breakdown voltage of 1700 V and the specific on-resistance of 3.5 mΩcm2.
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Info:
Periodical:
Materials Science Forum (Volumes 778-780)
Pages:
907-910
Citation:
Online since:
February 2014
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