Development of 3.3 kV SiC-MOSFET: Suppression of Forward Voltage Degradation of the Body Diode

Shigehisa Yamamoto; Yukiyasu Nakao; Nobuyuki Tomita; Shuhei Nakata; Satoshi Yamakawa

doi:10.4028/www.scientific.net/MSF.778-780.951

Paper Titles

14.6 mΩcm² 3.3 kV DIMOSFET on 4H-SiC (000-1)
p.935

1200 V 4H-SiC DMOSFET with an Integrated Gate Buffer
p.939

Designing of Quasi-Modulated Region in 4H-SiC Lateral RESURF MOSFETs
p.943

Utilization of SiC MOSFET Body Diode in Hard Switching Applications
p.947

Development of 3.3 kV SiC-MOSFET: Suppression of Forward Voltage Degradation of the Body Diode
p.951

High Temperature Reliability of the SiC-MOSFET with Copper Metallization
p.955

Impact of Hot Carrier Degradation and Positive Bias Temperature Stress on Lateral 4H-SiC nMOSFETs
p.959

Investigation on Internally Unbalanced Switching Behavior for Realization of 1-cm² SiC-MOSFET
p.963

Reliability Performance of 1200 V and 1700 V 4H-SiC DMOSFETs for Next Generation Power Conversion Applications
p.967

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Development of 3.3 kV SiC-MOSFET: Suppression of...

Development of 3.3 kV SiC-MOSFET: Suppression of Forward Voltage Degradation of the Body Diode

Abstract:

In order to achieve cost reduction or shrinkage of power devices, an internal body diode, which forms in a MOSFET parasitically, can be designed as a free-wheeling diode in substitution for an external Schottky barrier diode (SBD). However, in a SiC p-i-n diode, forward current stress causes reliability degradation due to expansion of the electron-hole recombination-induced stacking faults. Applying the process optimization of the epitaxial layer for the reduction of recombination-induced stacking faults and the body diode screening method to 3.3 kV SiC-MOSFETs, we obtained more stable devices under forward current operation.

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Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

951-954

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.951

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Online since:

February 2014

Authors:

Shigehisa Yamamoto*, Yukiyasu Nakao, Nobuyuki Tomita, Shuhei Nakata, Satoshi Yamakawa

Keywords:

Body Diode, MOSFET, Reliability, Silicon Carbide (SiC), Stacking Fault

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