Analytical Prediction of the Cross-Over Point in the Temperature Coefficient of the Forward Characteristics of 4H−SiC p+−i−n Diodes
p.628
p.628
Temperature Dependence of Minority Carrier Lifetime in Epitaxially Grown p+-p–-n+ 4H-SiC Drift Step Recovery Diodes
p.632
p.632
4H-Silicon Carbide p-n Diode for High Temperature (600 °C) Environment Applications
p.636
p.636
Observation and Analysis of a Non-Uniform Avalanche Phenomenon in 4H-SiC 4°-Off (0001) p-n Diodes Terminated with a Floating-Field Ring
p.640
p.640
4H-SiC P+N UV Photodiodes for Space Applications
p.644
p.644
Characterization of 4H-SiC pn Structures with Unstable Excess Current
p.648
p.648
The Impact of Interface Charge on the Breakdown Voltage of Terminated 4H-SiC Power Devices
p.652
p.652
Robust Double-Ring Junction Termination Extension Design for High Voltage Power Semiconductor Devices Based on 4H-SiC
p.656
p.656
Industrial Approach for Next Generation of Power Devices Based on 4H-SiC
p.660
p.660
4H-SiC P+N UV Photodiodes for Space Applications
Abstract:
Spectral sensitivity measurements versus temperature have been carried out on irradiated SiC p+n photodiodes, fabricated using two different doping processes: Aluminium standard implantation and Boron plasma immersion ion implantation. The spectral sensitivity of Al doped photodiodes increase for incident wavelength higher than 270 nm, and are very stable below. Boron doped irradiated photodiodes show a general increase of the photoresponse for all wavelengths. In both cases, an hysteresis effect is observable when with the temperature. Results are presented and discussed.
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Info:
Periodical:
Materials Science Forum (Volumes 821-823)
Pages:
644-647
Citation:
Online since:
June 2015
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