Comparative Study of Characteristics of Lateral MOSFETs Fabricated on 4H-SiC (11-20) and (1-100) Faces

Keiko Ariyoshi; Shinsuke Harada; Junji Senzaki; Takahito Kojima; Yusuke Kobayashi; Yasunori Tanaka; Ryosuke Iijima; Takashi Shinohe

doi:10.4028/www.scientific.net/MSF.821-823.721

Paper Titles

Recovery of the Electrical Characteristics of SiC MOSFETs Irradiated with Gamma-Rays by Thermal Treatments
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Impact of Nitric Oxide Post Oxidation Anneal on the Bias Temperature Instability and the On-Resistance of 4H-SiC nMOSFETs
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Study of Mobility Limiting Mechanisms in (11-20) 4H-SiC NO Annealed MOSFETs
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Study of Geometrical Effects in Charge Pumping Current for Lateral SiC nMOSFETs Electrical Characterization
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Comparative Study of Characteristics of Lateral MOSFETs Fabricated on 4H-SiC (11-20) and (1-100) Faces
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Reliable 4H-SiC MOSFET with High Threshold Voltage by Al₂O₃-Inserted Gate Insulator
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Effect of Fixed Oxide Charges and Donor-Like Interface Traps on the Breakdown Voltage of SiC Devices with FGR and JTE Terminations
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Electrical Characterization of 3C-SiC Lateral MOSFETs Fabricated on Heteroepitaxial Films Including High Density of Defects
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Effect of Bulk Potential Engineering on the Transport Properties of SiC MOSFETs: Characterization and Interpretation
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HomeMaterials Science ForumMaterials Science Forum Vols. 821-823Comparative Study of Characteristics of Lateral...

Comparative Study of Characteristics of Lateral MOSFETs Fabricated on 4H-SiC (11-20) and (1-100) Faces

Abstract:

We have fabricated the lateral MOSFETs on (11-20) and (1-100) faces and have compared the properties between these faces with various gate oxide processes. It has been demonstrated that (11-20) and (1-100) faces show comparable electrical properties with nitridation treatment on the gate oxide. Our result indicates that both faces exhibit the similar trend of the mobility vs. D_it. Furthermore, it has been shown that NO POA is beneficial to both faces in achieving high channel mobility and suppressed V_t instability.

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Periodical:

Materials Science Forum (Volumes 821-823)

Pages:

721-724

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.721

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Online since:

June 2015

Authors:

Keiko Ariyoshi*, Shinsuke Harada, Junji Senzaki, Takahito Kojima, Yusuke Kobayashi, Yasunori Tanaka, Ryosuke Iijima, Takashi Shinohe

Keywords:

(1-100), (11-20), Channel Mobility, Gate Oxide, MOSFET

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* - Corresponding Author

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