4H-SiC(0001) Surface Faceting during Interaction with Liquid Si

Véronique Soulière; Davy Carole; Massimo Camarda; Judith Woerle; Ulrike Grossner; Olivier Dezellus; Gabriel Ferro

doi:10.4028/www.scientific.net/MSF.858.163

Paper Titles

Stacking Fault Analysis of Epitaxial 3C-SiC on Si(001) Ridges
p.147

3C-SiC Epitaxy on Deeply Patterned Si(111) Substrates
p.151

Optimization of the Silicidation and Growth Processes for 3C-SiC Heteroepitaxy on Diamond Substrate
p.155

Voids-Free 3C-SiC/Si Interface for High Quality Epitaxial Layer
p.159

4H-SiC(0001) Surface Faceting during Interaction with Liquid Si
p.163

Advances in 3x150 mm Hot-Wall and 6x150 mm Warm-Wall SiC Epitaxy for 10kV-Class Power Devices
p.167

Analysis and Reduction of Stacking Faults in Fast Epitaxial Growth
p.173

Design of Silicon Carbide Devices to Minimize the Impact of Variation of Epitaxial Parameters
p.177

Effect of H₂ Carrier Gas on CVD Growth Rate for 4H-SiC Trench Filling
p.181

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4H-SiC(0001) Surface Faceting during Interaction with Liquid Si

Abstract:

The aim of this study was to find conditions allowing the "natural" formation of a regular and controllable step bunched morphology on a 4H-SiC seed without the need of any SiC deposition. This was performed by melting a bulk piece of Si on a 4°off 4H seed in the temperature range of 1500 - 1600°C, for 15 min. After etching the remaining Si, the 4H surface was found to be successfully highly step bunched with steps very parallel and regular. A mechanism of dissolution-precipitation was proposed, which could occur both on a short (step to step) and long (centre to periphery) range. This process is kinetically limited at low temperature (1500-1550°C) and considered to be close to the equilibrium at 1600°C.