High Temperature Variable Range Hopping in Heavy Al Implanted 4H-SiC

Antonella Parisini; Andrea Parisini; Marco Gorni; Roberta Nipoti

doi:10.4028/www.scientific.net/MSF.858.283

Paper Titles

Magnetic Field Sensing with Atomic Scale Defects in SiC Devices
p.265

Photoluminescence of 10H-SiC
p.269

Mapping the Strain State of 3C-SiC/Si (001) Suspended Structures Using μ-XRD
p.274

Heteropolytypic Superlattices
p.278

High Temperature Variable Range Hopping in Heavy Al Implanted 4H-SiC
p.283

Optical Nuclear Spin Polarization of Divacancies in SiC
p.287

Boron-Implanted 3C-SiC for Intermediate Band Solar Cells
p.291

Correlation of Lifetime Mapping of 4H-SiC Epilayers with Structural Defects Using Synchrotron X-Ray Topography
p.297

Doping of 4H-SiC with Group IV Elements
p.301

HomeMaterials Science ForumMaterials Science Forum Vol. 858High Temperature Variable Range Hopping in Heavy...

High Temperature Variable Range Hopping in Heavy Al Implanted 4H-SiC

Abstract:

In this work, we confirm and extend the results of a previous study where a variable range hopping transport through localized impurity states has been found to dominate the electrical transport properties of 3×10²⁰ cm^-3 and 5×10²⁰ cm^-3 Al⁺ implanted 4H-SiC layers after 1950-2000 °C post implantation annealing. In this study, samples with longer annealing times have been taken into account. The temperature dependence of these sample conductivity follows a variable range hopping law, consistent with a nearly two-dimensional hopping transport of non-interacting carriers that in the highest doped samples, persists up to around room temperature. This result indicates that the hole transport becomes strongly anisotropic on increasing the doping level. At the origin of this unusual electrical behavior, may be the presence of basal plane stacking faults, actually observed by transmission electron microscopy in one of the 5×10²⁰ cm^-3 samples

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Periodical:

Materials Science Forum (Volume 858)

Pages:

283-286

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.283

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Online since:

May 2016

Authors:

Antonella Parisini*, Andrea Parisini, Marco Gorni, Roberta Nipoti

Keywords:

4H-SiC(Al), Electrical Doping by Ion Implantation, Variable Range Hopping Conduction

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References

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