Dislocation Characterization in 4H-SiC Crystals

Joseph J. Sumakeris; R.T. Leonard; Eugene Deyneka; Yuri Khlebnikov; Adrian R. Powell; Jeff Seaman; Michael J. Paisley; V. Tsevtkov; Jian Qiu Guo; Yu Yang; Michael Dudley; Elif Balkas

doi:10.4028/www.scientific.net/MSF.858.393

Paper Titles

Mapping of Threading Screw Dislocations in 4H n-Type SiC Wafers
p.376

Electrical Properties of Defects in 4H-SiC Investigated by Photo-Induced-Currents Measurements
p.380

Effects of Basal Plane Dislocation Density in 4H-SiC Substrate on Degradation of Body-Diode Forward Voltage
p.384

Dislocations in SiC Revealed by NaOH Vapor Etching and a Comparison with X-Ray Topography Taken with Various g-Vectors
p.389

Dislocation Characterization in 4H-SiC Crystals
p.393

Cross Section and Plan View STEM Analysis on Identical Conversion Point of Basal Plane Dislocation to Threading Edge Dislocation of 4H-SiC
p.397

Characterization of Threading Screw Dislocations of Burgers Vectors with A-Components in 4H-SiC
p.401

Characterization of 4H-SiC PiN Diodes Formed on Defects Identified by PL Imaging
p.405

Bipolar Degradation of 6.5 kV SiC pn-Diodes: Result Prediction by Photoluminescence
p.410

HomeMaterials Science ForumMaterials Science Forum Vol. 858Dislocation Characterization in 4H-SiC Crystals

Dislocation Characterization in 4H-SiC Crystals

Abstract:

Definitive correlations are presented between specific types of dislocations identified via Synchrotron White Beam X-Ray Topography (SWBXRT) and identified via selective etching of 4H-SiC substrates. A variety of etch conditions and the results on different faces of SiC substrates and epiwafers are examined. Hillocks formed on the carbon face of the substrate after KOH etching correlate very well to TSDs identified via SWBXRT. Topography of substrates and of vertical crystal slices reveals a large proportion of Threading Mixed character Dislocations (TMDs) in the population of Threading Screw Dislocations.